| PART |
Description |
Maker |
| UPB100474B-15 UPB100474B-10 UPB100474B-6 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 15 ns.
1,024 x 4-bit 100K ECL RAM. Access time(max) 10 ns.
1,024 x 4-bit 100K ECL RAM. Access time(max) 6 ns.
|
NEC
|
| MCM1451L01 |
1024-Bit Static RAM
|
Motorola Semiconductor
|
| MC100H646 MC100EP445FA MC100E156FNR2 MC100EPT22D M |
PECL/TTL-TTL 1:8 Distribution Chip
3.3V / 5VECL 8-Bit Serial/Parallel Converter
5V ECL 3-Bit 4:1 Mux-Latch
3.3V Dual LVTTL/LVCMOS to Differential LVPECL Translator
3.3V / 5V ECL 6-Bit Differential Register with Master Reset
3.3V / 5V 2-Input Differential AND/NAND
3.3V / 5V ECL ÷2 Divider
5V ECL Divide by 2, Divide by 4/6 Clock Generation Chip
5V ECL Low Impedance Driver
|
ON Semiconductor
|
| D2148H |
High Speed 1024 x 4-Bit Static RAM
|
Intel
|
| UPD2101AL-4 |
1024 BIT (256 X 4) STATIC MOS RAM WITH SEPARATE I/O
|
NEC Corp.
|
| TC5514P TC5514AP |
(TC5514P/AP/APL) 1024 x 4-Bit CMOS Static RAM
|
Toshiba
|
| LC3514A |
1024 x 4-Bit High Speed CMOS Static RAM
|
Sanyo
|
| UPD2101AL UPD2101AL-2 UPD2101AL-4 |
1024 BIT (256 X 4) STATIC MOS RAM WITH SEPARATE I/O
|
NEC
|
| HS-A82B-FREQ HS-820 HS-A82C-FREQ HS-A820-FREQ HS-A |
ECL-100K ECL Supplement
5 V, /-100 ppm, ECL crystal clock oscillator
5 V, /-50 ppm, ECL crystal clock oscillator
5 V, /-25 ppm, ECL crystal clock oscillator
5 V, customer specific, ECL crystal clock oscillator
|
NEL Frequency Controls
|
| IDT101494S8Y IDT101494S15C |
HIGH-SPEED BiCMOS ECL STATIC RAM 64K (16K-BIT) SRAM
|
Integrated Device Technology, Inc.
|
| IDT100494BS7C IDT101494BS8C IDT101494BS8Y IDT10049 |
HIGH-SPEED BiCMOS ECL STATIC RAM 64K (16K×4-BIT) SRAM
HIGH-SPEED BICMOS ECL STATIC RAM 64K (16K】4-BIT) SRAM
|
Integrated Device Technology
|
| LC87F5932A |
CMOS IC Internal 32K-byte FROM and 1024-byte RAM 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
